A phenomenological approach to estimating transit times in GaAs HBTs
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (10) , 2113-2120
- https://doi.org/10.1109/16.59899
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Transport equation approach for heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1990
- Monte Carlo approach to transient analysis of HBTs with different collector designsIEEE Electron Device Letters, 1989
- The effect of base grading on the gain and high-frequency performance of AlGaAs/GaAs heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1989
- Monte Carlo study of the influence of collector region velocity overshoot on the high-frequency performance of AlGaAs/GaAs heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1988
- A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structureIEEE Transactions on Electron Devices, 1988
- Monte Carlo simulation of AlGaAs/GaAs heterojunction bipolar transistorsIEEE Electron Device Letters, 1984
- Transport equations for electrons in two-valley semiconductorsIEEE Transactions on Electron Devices, 1970
- HOT ELECTRON RELAXATION TIMES IN TWO-VALLEY SEMICONDUCTORS AND THEIR EFFECT ON BULK-MICROWAVE OSCILLATORSApplied Physics Letters, 1967
- LSA Oscillator-Diode TheoryJournal of Applied Physics, 1967
- High-field distribution function in GaAsIEEE Transactions on Electron Devices, 1966