Electronic states in B δ-doped Si quantum well
- 1 September 1996
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 197 (1) , 105-109
- https://doi.org/10.1002/pssb.2221970116
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- A solution of the doping problem for Ga delta-doping layers in SiJournal of Applied Physics, 1995
- A simple model for delta-doped field-effect transistor electronic statesJournal of Applied Physics, 1995
- Time dependence of dopant diffusion in δ-doped Si films and properties of Si point defectsApplied Physics Letters, 1994
- Electrical transport between delta layers in siliconJournal of Applied Physics, 1992
- p-type delta-doped layers in silicon: Structural and electronic propertiesApplied Physics Letters, 1990
- Quantized states in delta-doped Si layersSuperlattices and Microstructures, 1989
- Atomic layer doped field-effect transistor fabricated using Si molecular beam epitaxyApplied Physics Letters, 1989
- Structural properties of ultrathin arsenic-doped layers in siliconApplied Physics Letters, 1989
- Growth and characterization of a delta-function doping layer in SiApplied Physics Letters, 1987
- The delta-doped field-effect transistor (δFET)IEEE Transactions on Electron Devices, 1986