Characterization of Two Electromigration Failure Modes In Submicron Vlsi
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Fatal electromigration voids in narrow aluminum-copper interconnectApplied Physics Letters, 1992
- Electromigraton activation energy dependence on AlCu interconnect linewidth and microstructureApplied Physics Letters, 1992
- The electromigration failure distribution: The fine-line caseJournal of Applied Physics, 1991
- Morphology of electromigration-induced damage and failure in Al alloy thin film conductorsJournal of Electronic Materials, 1990
- A study on stress-induced migration in aluminum metallization based on direct stress measurementsJournal of Vacuum Science & Technology B, 1990
- Grain size dependence of electromigration-induced failures in narrow interconnectsApplied Physics Letters, 1989
- New technique and analysis of accelerated electromigration life testing in multilevel metallizationsApplied Physics Letters, 1988
- A model for the width dependence of electromigration lifetimes in aluminum thin-film stripesApplied Physics Letters, 1980
- Dependence of Electromigration-Induced Failure Time on Length and Width of Aluminum Thin-Film ConductorsJournal of Applied Physics, 1970
- Electromigration failure modes in aluminum metallization for semiconductor devicesProceedings of the IEEE, 1969