Influence of post-stress effects on the dynamic hot-carrier degradation behavior of passivated n-channel MOSFET's
- 1 July 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (7) , 357-359
- https://doi.org/10.1109/55.192754
Abstract
An apparently non-quasi-static degradation behavior is found for nMOS transistors that are dynamically stressed with conditions which favor hot-hole injection. This effect can be ascribed to a post-stress effect occurring during the waiting time between the different pulses. It is shown that this effect is of importance only when a net positive charge is built up during the stress. The deviating behavior under dynamic stress conditions can be predicted based on the measurement of the post-stress effect after a static degradation.Keywords
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