Thermal etching of binary and ternary III–V compounds under vacuum conditions
- 1 September 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 166 (1-4) , 167-171
- https://doi.org/10.1016/0022-0248(96)00040-1
Abstract
No abstract availableKeywords
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- Summary Abstract: Layer-by-layer evaporation of GaAs (001)Journal of Vacuum Science & Technology B, 1985