MBE as a production technology for AlGaAs lasers
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 1043-1046
- https://doi.org/10.1016/0022-0248(91)91129-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Single-Longitudinal-Mode Selfaligned (AlGa)As Double-Heterostructure Lasers Fabricated by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985
- Extremely low threshold (AlGa)As graded-index waveguide separate-confinement heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1982
- Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular-beam epitaxyApplied Physics Letters, 1981
- Low-current-threshold and high-lasing uniformity GaAs–AlxGa1−xAs double-heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1979
- GaAs–Alx Ga1−x As double-heterostructure lasers prepared by molecular-beam epitaxyApplied Physics Letters, 1974