Ti-Si-N films prepared by plasma-enhanced chemical vapor deposition
- 1 September 1992
- journal article
- Published by Springer Nature in Plasma Chemistry and Plasma Processing
- Vol. 12 (3) , 287-297
- https://doi.org/10.1007/bf01447027
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Influence of temperature on the growth of TiN films by plasma-assisted chemical vapour depositionThin Solid Films, 1988
- TiN coatings on M2 steel produced by plasma-assisted chemical vapor depositionThin Solid Films, 1987
- Plasma chemical vapor deposition of TiNPlasma Chemistry and Plasma Processing, 1984
- Density and deposition rate of chemically vapour-deposited Si3N4-TiN compositesJournal of Materials Science, 1983
- Microstructure of Si3N4-TiN composites prepared by chemical-vapour depositionJournal of Materials Science, 1982
- Preparation and some properties of chemically vapour-deposited Si3N4-TiN compositeJournal of Materials Science, 1982
- The plasma-assisted chemical vapour deposition of TiC, TiN and TiCxN1−xThin Solid Films, 1981
- A theoretical approach to heterogeneous reactions in non-isothermal low pressure plasmaPublished by Springer Nature ,1974
- Chemischer transport im nichtisothermen plasma; bildung von ain- und tin-kristallenJournal of Crystal Growth, 1971