Maximum Junction Temperatures of SiC Power Devices
- 19 January 2009
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 56 (2) , 337-342
- https://doi.org/10.1109/ted.2008.2010605
Abstract
This paper presents a detailed physical analysis on the junction temperatures, thermal stabilities, and thermal runaway effects of self-heating unipolar SiC power devices. Results reveal that the risk of thermal runaway could limit the usable junction temperature of these SiC devices to substantially lower than 200°C, regardless of the device size and the cooling method used.Keywords
This publication has 9 references indexed in Scilit:
- Development of 4H-SiC LJFET-Based Power ICIEEE Transactions on Electron Devices, 2008
- Status of 1200V 4H-SiC Power DMOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2007
- SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 °CMaterials Science Forum, 2007
- 400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200°C Baseplate TemperatureMaterials Science Forum, 2006
- High temperature characterization of SiC BJTs for power switching applicationsSolid-State Electronics, 2006
- New Unipolar Switching Power Device Figures of MeritIEEE Electron Device Letters, 2004
- An Overview of High-Temperature Electronics and Sensor Development at NASA Glenn Research CenterJournal of Turbomachinery, 2003
- High temperature characterization of implanted-emitter 4H-SiC BJTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]IEEE Transactions on Electron Devices, 2001