Thin-Film Transistors based on Hot-Wire Amorphous Silicon on Silicon Nitride

This publication has 13 references indexed in Scilit:

• Unification of the time and temperature dependence of dangling-bond-defect creation and removal in amorphous-silicon thin-film transistors
  Physical Review B, 1998
• Device-quality polycrystalline and amorphous silicon films by hot-wire chemical vapour deposition
  Philosophical Magazine Part B, 1997
• Stable amorphous-silicon thin-film transistors
  Applied Physics Letters, 1997
• Improved mobility of amorphous silicon thin-film transistors deposited by hot-wire chemical vapor deposition on glass substrates
  Applied Physics Letters, 1997
• Deposition-rate reduction through improper substrate-to-electrode attachment in very-high-frequency deposition of a-Si:H
  Journal of Applied Physics, 1996
• Stability of hot-wire deposited amorphous-silicon thin-film transistors
  Applied Physics Letters, 1996
• A defect-pool model for near-interface states in amorphous silicon thin-film transistors
  Philosophical Magazine Part B, 1991
• Resolution of amorphous silicon thin-film transistor instability mechanisms using ambipolar transistors
  Applied Physics Letters, 1987
• Instability mechanism in hydrogenated amorphous silicon thin-film transistors
  Applied Physics Letters, 1987
• Metastable Defects in Amorphous-Silicon Thin-Film Transistors
  Physical Review Letters, 1986