A defect-pool model for near-interface states in amorphous silicon thin-film transistors
- 1 January 1991
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 63 (1) , 325-336
- https://doi.org/10.1080/01418639108224449
Abstract
These results show the importance of the Fermi energy in controlling the near-interface state distribution and suggests that the defect pool model can account for most deep states in a-Si: H (near-interface as well as bulk states).Keywords
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