LEED from epitaxial surfaces
- 1 December 1993
- journal article
- Published by Elsevier in Surface Science
- Vol. 298 (2-3) , 369-377
- https://doi.org/10.1016/0039-6028(93)90050-t
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- The interplay of surface morphology and strain relief in surfactant mediated growth of Ge on Si(111)Surface Science, 1993
- Low-energy electron diffraction with energy resolutionReview of Scientific Instruments, 1992
- Epitaxial growth of thin copper layers on Cu(111) studied by high-resolution low-energy-electron-diffractionSurface Science, 1990
- The initial stages of growth of silicon on Si(111) by slow positron annihilation low-energy electron diffractionThin Solid Films, 1989
- A new LEED instrument for quantitative spot profile analysisSurface Science, 1986
- RHEED studies of heterojunction and quantum well formation during MBE growth — from multiple scattering to band offsetsSurface Science, 1986
- Phonon inelastic scattering of He atoms from single crystal surfacesJournal of Vacuum Science & Technology A, 1984
- Instrumentation for low-energy electron diffractionReview of Scientific Instruments, 1983
- Epitaxy of Si(111) as studied with a new high resolving LEED systemSurface Science, 1982
- LEED-investigations and work-function measurements of the first stages of epitaxy of tungsten on tungsten (110)Journal of Applied Physics, 1980