Thermal simulation of the Czochralski silicon growth process by three different models and comparison with experimental results
- 1 October 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 180 (3-4) , 461-467
- https://doi.org/10.1016/s0022-0248(97)00241-8
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- The Dependence of Ring‐Like Distributed Stacking Faults on the Axial Temperature Gradient of Growing Czochralski Silicon CrystalsJournal of the Electrochemical Society, 1996
- The dependence of bulk defects on the axial temperature gradient of silicon crystals during Czochralski growthJournal of Crystal Growth, 1995
- Experimental observation and numerical simulation of wave patterns in a Czochralski silicon meltJournal of Crystal Growth, 1994
- Study of characteristics of the crystal temperature in a Czochralski puller through experiment and simulationJournal of Crystal Growth, 1993
- Computer modelling of heat transfer in Czochralski silicon crystal growthJournal of Crystal Growth, 1991
- Global modelling of heat transfer in crystal growth furnacesInternational Journal of Heat and Mass Transfer, 1990
- Toward an integrated analysis of czochralski growthJournal of Crystal Growth, 1989
- Thermal analysis of LEC InP growthJournal of Crystal Growth, 1983
- Influence of growth conditions on melt interface temperature oscillations in silicon czochralski growthJournal of Crystal Growth, 1983