Defects in p+-gate metal–oxide–semiconductor structures probed by monoenergetic positron beams
- 15 November 1999
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 86 (10) , 5385-5391
- https://doi.org/10.1063/1.371535
Abstract
No abstract availableThis publication has 33 references indexed in Scilit:
- Theory of defects and defect processes in silicon dioxideJournal of Non-Crystalline Solids, 1997
- Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P+-Implanted Si Studied Using Monoenergetic Positron BeamsJapanese Journal of Applied Physics, 1996
- Study of the Si-Si Interface Using Variable Energy Positron Two-Dimensional Angular Correlation of Annihilation RadiationPhysical Review Letters, 1996
- Positron annihilation in SiO2/Si structure at low temperatureJournal of Applied Physics, 1995
- Positron trapping by defects in vitreous silica at low temperatureJournal of Physics: Condensed Matter, 1995
- Slow Positron Pulsing System for Variable Energy Positron Lifetime SpectroscopyJapanese Journal of Applied Physics, 1991
- Chemical Bonding Features of Fluorine and Boron in BF2 +-Ion-Implanted SiJapanese Journal of Applied Physics, 1990
- Screening of positrons in semiconductors and insulatorsPhysical Review B, 1989
- Program system for analysing positron lifetime spectra and angular correlation curvesComputer Physics Communications, 1981
- Ion-induced defects in semiconductorsNuclear Instruments and Methods, 1981