PRESSURE SENSITIVITY OF GOLD-POTASSIUM TANTALATE SCHOTTKY BARRIER DIODES
- 1 June 1967
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 10 (11) , 329-332
- https://doi.org/10.1063/1.1754832
Abstract
The effect of localized uniaxial force (exerted by a hemispherical stylus) on the voltage‐current relationship of Au‐KTaO3 Schottky barrier diodes is described. Pronounced reversible changes were observed and characterized by stress‐induced decreases of up to 0.8 eV in the metal‐semiconductor barrier height. The observed diode n values [n ≡ (q/kT)(dV/d ln J)] at 300°K ranged from 1.05 to 1.10. This indicates that thermionic field emission may be the dominant current flow mechanism. An analysis of the pressure profile produced by the stylus yields 4 × 10−11 V‐cm2/dyn for the pressure sensitivity of the barrier height.Keywords
This publication has 10 references indexed in Scilit:
- Field and thermionic-field emission in Schottky barriersPublished by Elsevier ,2002
- Effect of generation-recombination centers on the stress-dependence of Si p-n junction characteristicsSolid-State Electronics, 1967
- Surface Barrier Diodes on Semiconducting KTaO3Journal of Applied Physics, 1967
- Current transport in metal-semiconductor barriersSolid-State Electronics, 1966
- Measurement of Nonlinear Polarization of KTaO3 using Schottky DiodesJournal of Applied Physics, 1965
- The effects of point-contact pressure on silicon planar junctionsProceedings of the IEEE, 1965
- Some Transport Properties of Oxygen-Deficient Single-Crystal Potassium Tantalate (KTa)Physical Review B, 1965
- Structural and operational characteristics of piezo-transistors and allied devicesSolid-State Electronics, 1965
- Some effects of localized stress on silicon planar transistorsIEEE Transactions on Electron Devices, 1964
- Resistance of Elastically Deformed Shallow p-n Junctions. IIJournal of Applied Physics, 1963