Croissance épitaxique de GaAs1−xPx (0 < x < 0.6) par OM-CVD á partir du complexe CIEt2Ga·AsEt3 et de la diethyl phosphine: une source de phosphore originale HPEt2
- 1 August 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 62 (3) , 568-576
- https://doi.org/10.1016/0022-0248(83)90401-3
Abstract
No abstract availableKeywords
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