Improved Stability Against Light-Exposure in Deuterated Amorphous Silicon Alloy Solar Cells
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processingApplied Physics Letters, 1996
- Light-induced defect densities in hydrogenated and deuterated amorphous silicon deposited at different substrate temperaturesPhysical Review B, 1994
- Stability Studies of Hydrogenated Amorphous Silicon Alloy Solar Cells Prepared with Hydrogen DilutionMRS Proceedings, 1994
- Light-induced changes in hydrogenated and deuterated amorphous silicon films and solar cellsApplied Physics Letters, 1991
- Structural Differences between Hydrogenated and Deuterated Amorphous Silicon Films Prepared by Plasma-Enhanced Chemical Vapor DepositionJapanese Journal of Applied Physics, 1991
- Control of photodegradation in amorphous silicon: The effect of deuteriumPhilosophical Magazine Part B, 1991
- Reduced light-induced changes of photoconductivity in duterated amorphous siliconJournal of Applied Physics, 1990
- Light-induced metastable defects in amorphous silicon: The role of hydrogenApplied Physics Letters, 1986
- On the mechanism of light-induced effects in hydrogenated amorphous silicon alloysApplied Physics Letters, 1983