β-SiC Formation by Low-Energy Ion-Doping Technique
- 1 August 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (8A) , L1493
- https://doi.org/10.1143/jjap.29.l1493
Abstract
β-SiC was prepared on silicon (Si) substrates by a low-energy ion-doping technique without mass separation. Carbon (C) and hydrogen (H) ions obtained from a discharge of diluted methane gas with hydrogen gas were implanted into Si substrates at the DC acceleration voltage of 3.0 kV. The dependence of carbon dose, dilution ratio and annealing temperature (T a) on the Si-C bond formation was investigated. Simultaneous implantation of H ions as well as C ions was effective for tight Si-C bond formation at low T a(800°C), the β-SiC network was formed in the implanted layer. With increasing carbon dose, the amount of the β-SiC increased and was saturated at the dose of ∼4×1015 ions/cm2.Keywords
This publication has 7 references indexed in Scilit:
- Large Area Doping Technique Using an Ion Source of rf Discharge with Magnetic FieldJapanese Journal of Applied Physics, 1988
- Phosphorus doping for hydrogenated amorphous silicon films by a low-energy ion doping techniqueApplied Physics Letters, 1987
- Characteristics of the synthesis of β-SiC by the implantation of carbon ions into siliconThin Solid Films, 1982
- Structure and annealing properties of silicon carbide thin layers formed by implantation of carbon ions in siliconThin Solid Films, 1981
- Measurement of Film Thickness from Lattice Absorption BandsJournal of the Electrochemical Society, 1973
- FORMATION OF SiC IN SILICON BY ION IMPLANTATIONApplied Physics Letters, 1971
- Infrared Properties of Cubic Silicon Carbide FilmsPhysical Review B, 1959