Structure and annealing properties of silicon carbide thin layers formed by implantation of carbon ions in silicon
- 1 July 1981
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 81 (4) , 319-327
- https://doi.org/10.1016/0040-6090(81)90516-2
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
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