Effect of frequency on the deposition of microcrystalline silicon from tetrachlorosilane in low-pressure r.f. plasmas
- 1 December 1982
- journal article
- Published by Springer Nature in Plasma Chemistry and Plasma Processing
- Vol. 2 (4) , 341-351
- https://doi.org/10.1007/bf00567561
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Preparation of polycrystalline silicon coatings from trichlorosilaneThin Solid Films, 1982
- Diagnostics of microwave-induced plasmas and polymerization of gaseous hydrocarbonsPlasma Chemistry and Plasma Processing, 1981
- The dependence of coating in inductive R.F. plasmas on gas flow velocity, pressure and R.F. powerThin Solid Films, 1980
- Characterization of pyrolytic carbon deposited on graphite substrates in inductive R.F. plasmas of propylene and argonThin Solid Films, 1980
- R.f. plasma deposition of amorphous silicon films from SiCl4-H2Thin Solid Films, 1980