Thermally and light-induced instabilities in phosphorus-doped hydrogenated amorphous silicon

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Abstract
Changes in the gap-state profile of phosphorus-doped hydrogenated amorphous silicon films subjected to light soaking and thermal quenching have been studied by isothermal capacitance transient spectroscopy. No suggestive changes due to thermal quenching are observed in the density-of-states distribution at least in the energy range 0.25–1.50 eV below the conduction-band edge (Ec). On the other hand, gap states are created in the range of 0.25–0.35 eV below Ec by light soaking, in addition to the conversion from deeper states located 1.0–1.2 below Ec to shallower states located 0.4–0.6 below Ec. These results suggest that the effects of light soaking and thermal quenching are apparently independent of each other.