Return flows in horizontal MOCVD reactors studied with the use of TiO2 particle injection and numerical calculations
- 1 April 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 94 (4) , 929-946
- https://doi.org/10.1016/0022-0248(89)90127-9
Abstract
No abstract availableThis publication has 27 references indexed in Scilit:
- Flow patterns in various vertical reactors and movpe growthJournal of Crystal Growth, 1986
- Vertical versus horizontal reactor: An optical study of the gas phase in a MOCVD reactorJournal of Crystal Growth, 1986
- MOCVD in inverted stagnation point flowJournal of Crystal Growth, 1986
- Complex flow phenomena in MOCVD reactorsJournal of Crystal Growth, 1986
- Extremely uniform growth of GaAs and GaAlAs by low pressure metalorganic chemical vapor deposition on three-inch GaAs substratesJournal of Crystal Growth, 1984
- Reduced pressure MOVPE growth and characterization of GaAs/GaAlAs heterostructures using a triethylgallium sourceJournal of Crystal Growth, 1984
- Characterization of FaAs epitaxial layers by low pressure MOVPE using TEG as Ga sourceJournal of Crystal Growth, 1981
- High purity GaAs prepared from trimethylgallium and arsineJournal of Crystal Growth, 1981
- A New Method for Growing GaAs Epilayers by Low Pressure OrganometallicsJournal of the Electrochemical Society, 1979
- Device quality epitaxial gallium arsenide grown by the metal alkyl-hydride techniqueJournal of Crystal Growth, 1975