Precise evaluation of deep-level concentrations in capacitance transient analyses
- 15 July 1994
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (2) , 791-795
- https://doi.org/10.1063/1.357782
Abstract
A detailed treatment of space‐charge and free‐carrier densities is proposed to precisely analyze deep‐level concentrations by using capacitance transient measurements. This treatment is very effective for analysis of midgap levels, if thermally activated carriers from other defect levels play an important role in the free‐carrier density. The application of this analysis to evaluation of the midgap defect in bulk GaAs materials is demonstrated.This publication has 14 references indexed in Scilit:
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