Leakage current, annealing, and deep defect production studies in neutron irradiated n-type Si-detectors
- 1 March 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 301 (2) , 215-218
- https://doi.org/10.1016/0168-9002(91)90461-x
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Fast neutron damage in silicon detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1989
- Deep-level transient spectroscopy measurements of majority carrier traps in neutron irradiated n-type silicon detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1989
- Defect production and lifetime control in electron and γ-irradiated siliconJournal of Applied Physics, 1982
- Conparison of Neutron and 2 MeV Electron Damage in N-Type Silicon by Deep-Level Transient SpectroscopyIEEE Transactions on Nuclear Science, 1981
- A study of the gold acceptor in a silicon p+n junction and an n-type MOS capacitor by thermally stimulated current and capacitance measurementsSolid-State Electronics, 1976
- TSC defect level in silicon produced by irradiation with muons of GeV-energyRadiation Effects, 1976
- Thermally stimulated current measurements on silicon junctions produced by implantation of low energy boron ionsSolid-State Electronics, 1974
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Neutron Spectra of 214Am/B, 241Am/Be, 241Am/F, 242Cm/Be, 238Pu/13C and 252Cf isotopic neutron sourcesThe International Journal of Applied Radiation and Isotopes, 1973
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the DivacancyPhysical Review B, 1965