GaAs Read-type IMPATT diodes for D-band
- 23 June 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (13) , 1070-1071
- https://doi.org/10.1049/el:19940713
Abstract
GaAs Read-type IMPATT diodes for operation at D-band frequencies have been designed and fabricated. The main design feature is low DC input voltage and high current density. The devices are encapsulated using the novel module technique on diamond heatsinks. RF output powers of 75 mW at 120 GHz and 8 mW at 144 GHz are realised. The highest oscillation frequency for CW operation is 150 GHz.Keywords
This publication has 4 references indexed in Scilit:
- GaAs single-drift flat-profile IMPATT diodes for CW operation at D bandElectronics Letters, 1992
- GaAs W-band impatt diodes for very low-noise oscillatorsElectronics Letters, 1990
- GaAs read-type impatt diode for 130 GHz CW operationElectronics Letters, 1981
- 150 GHz GaAs MITATT sourceIEEE Electron Device Letters, 1980