Dislocation energy bands in GaAs: An optical absorption study
- 1 January 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (1) , 281-286
- https://doi.org/10.1063/1.345249
Abstract
Numerical expressions of the piezoelectric and deformation electric fields associated with dislocations in zinc‐blende semiconductors are presented. They are used to calculate the optical absorption which they induce. These results are compared with the previously calculated charged‐line field absorption. For GaAs, we find that the latter one is prevailing and that the deformation electric field can be always neglected. Application of this model to experimental results in GaAs lead us to propose a two dislocation energy band scheme. One dislocation energy band D1 is located above the valence band and the other D2 is near midgap.This publication has 16 references indexed in Scilit:
- Charged dislocation induced optical absorption in GaAsJournal of Applied Physics, 1989
- Defect model of melt-grown GaAsJournal of Materials Research, 1987
- Hall effect of plastically deformed GaAsPhysica Status Solidi (a), 1986
- Optical Absorption Studies of Plastically Deformed InSbPhysica Status Solidi (b), 1984
- Occupation statistics of dislocation deep levels in III-V compoundsJournal of Applied Physics, 1982
- Structure and energy level calculations of dislocations in gallium arsenidePhilosophical Magazine Part B, 1981
- Inhomogeneous strain field scattering deformation potential. I. TheoryPhysica Status Solidi (b), 1977
- Optical Absorption in an Electric FieldPhysical Review B, 1964
- Optical Absorption in an Electric FieldPhysical Review B, 1963
- The valence band structure of the III–V compoundsJournal of Physics and Chemistry of Solids, 1962