A numerical analysis of submicrometer InP-transferred electron devices
- 1 March 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (3) , 603-606
- https://doi.org/10.1109/16.19975
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- A study of near-micron InP transferred electron devicesPhysica B+C, 1985
- Computer simulation of transferred electron devices using the displaced Maxwellian approachIEEE Transactions on Electron Devices, 1974
- The Gunn effectReports on Progress in Physics, 1967
- The intervalley transfer mechanism of negative resistivity in bulk semiconductorsProceedings of the Physical Society, 1965