Bistability and switching in a native-oxide-defined AlxGa1−xAs-GaAs quantum-well-heterostructure laser coupled to a linear array

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Abstract
Bistability and switching are observed in the light versus current (L‐I) characteristic of a native‐oxide‐defined AlxGa1−xAs‐GaAs quantum‐well‐heterostructure stripe laser side‐coupled to a linear array of end‐coupled rectangular minilasers. These diodes, with internally coupled elements and the current partitioned among the elements, exhibit a large hysteresis in the L‐I curve, with switching from the stimulated to the spontaneous regime occurring over substantial power (light) and current ranges. The linear array of minilasers and their resonances modulates and switches the stripe laser operation. The overall planar twin‐stripe laser structure is defined by H2O vapor oxidation (425 °C), in patterned form, of a significant thickness of the high‐gap AlxGa1−xAs upper confining layer of an AlxGa1−xAs‐GaAs quantum‐well heterostructure.