A model of the dependence of photovoltaic properties on effective diffusion length in polycrystalline silicon
- 30 April 1987
- journal article
- Published by Elsevier in Solar Cells
- Vol. 20 (3) , 167-176
- https://doi.org/10.1016/0379-6787(87)90026-3
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Influence of illumination on the grain boundary recombination velocity in siliconJournal of Applied Physics, 1984
- Grain boundary barrier height in base and space charge regionsSolid-State Electronics, 1983
- Relative influence of grain boundaries and intragrain defects on the photocurrents obtained with bridgman polysiliconSolar Cells, 1983
- Grain boundary effects in polycrystalline silicon solar cells I. Solution of the three-dimensional diffusion equation by the Green's function methodSolar Cells, 1983
- Dependence of electronic properties of polysilicon grain size and intragrain defectsSolid-State Electronics, 1983
- Theory of grain-boundary and intragrain recombination currents in polysilicon p-n-junction solar cellsIEEE Transactions on Electron Devices, 1980
- Theory of the electrical and photovoltaic properties of polycrystalline siliconJournal of Applied Physics, 1980
- Effect of grain boundaries in silicon on minority-carrier diffusion length and solar-cell efficiencyApplied Physics Letters, 1978
- Electronic processes at grain boundaries in polycrystalline semiconductors under optical illuminationIEEE Transactions on Electron Devices, 1977
- Carrier generation-recombination in the space-charge region of an asymmetrical p-n junctionSolid-State Electronics, 1968