Simulation with animation: microscopic growth kinetics of Si(001) homoepitaxy
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 864-869
- https://doi.org/10.1016/0022-0248(91)91098-u
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Monte Carlo simulations of Si(001) growth and reconstruction during molecular beam epitaxySurface Science, 1988
- Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substratesJournal of Vacuum Science & Technology B, 1988
- Epitaxial growth ofon Si: A direct Monte Carlo simulationPhysical Review B, 1988
- Epitaxial growth of silicon: A molecular-dynamics simulationPhysical Review B, 1987
- Origin of Reflection High-Energy Electron-Diffraction Intensity Oscillations during Molecular-Beam Epitaxy: A Computational Modeling ApproachPhysical Review Letters, 1987
- The physics of quantum well structuresReports on Progress in Physics, 1985
- Implications of the configuration-dependent reactive incorporation growth process for the group V pressure and substrate temperature dependence of III-V molecular beam epitaxial growth and the dynamics of the reflection high-energy electron diffraction intensityApplied Physics Letters, 1985
- Damped oscillations in reflection high energy electron diffraction during GaAs MBEJournal of Vacuum Science & Technology B, 1983
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983
- Toward quantum well wires: Fabrication and optical propertiesApplied Physics Letters, 1982