Study of the defects induced in N-type silicon irradiated by 1-3 MeV protons
- 1 December 1994
- journal article
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 41 (6) , 1932-1936
- https://doi.org/10.1109/23.340526
Abstract
The electrical properties of semiconductor components can be greatly modified by proton implantation. Spreading resistance, C-V (capacitance voltage) and DLTS (deep levels transient spectroscopy) measurements have been used to characterize N-type silicon irradiated by MeV proton at fluences up to 10/sup 14/p/sup +/cm/sup -2/. The greatest drawback induced by proton implantation is the overdoping effect which can strongly reduce device efficiency. The present work reports this effect in both annealed and unannealed samples.Keywords
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