Silicon vapor phase epitaxy
- 2 January 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 56 (2) , 273-280
- https://doi.org/10.1016/0022-0248(82)90445-6
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Photostimulated epitaxy of II–VI and IV–VI layersJournal of Crystal Growth, 1981
- Novel reactor for high volume low-cost silicon epitaxyJournal of Crystal Growth, 1978
- Mechanisms of chemical vapor deposition of siliconJournal of Crystal Growth, 1978
- Theoretical analysis of equilibrium adsorption layers in CVD systems (Si-H-Cl, Ga-As-H-Cl)Journal of Crystal Growth, 1978
- Anisotropy in the growth rates of silicon deposited by reduction of silicon tetrachlorideJournal of Crystal Growth, 1975
- Mechanism of crystal growth in the SiCl4-H2 systemJournal of Crystal Growth, 1974
- Defect-free nucleation of silicon on {111} silicon surfacesJournal of Crystal Growth, 1974
- Silicon epitaxial growthJournal of Crystal Growth, 1972