Novel reactor for high volume low-cost silicon epitaxy
- 1 December 1978
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 45, 97-107
- https://doi.org/10.1016/0022-0248(78)90420-7
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Transport Phenomena Measurements in Epitaxial ReactorsJournal of the Electrochemical Society, 1978
- Analysis of Transport Processes in Vertical Cylinder Epitaxy ReactorsJournal of the Electrochemical Society, 1977
- Growth and etching of silicon in chemical vapour deposition systems; The influence of thermal diffusion and temperature gradientJournal of Crystal Growth, 1975
- The chemistry and transport phenomena of chemical vapor deposition of silicon from SiCl4Journal of Crystal Growth, 1975
- Chemical Processes in Vapor Deposition of Silicon: I . Deposition from and Etching byJournal of the Electrochemical Society, 1975
- Chemical Processes in Vapor Deposition of Silicon: II . Deposition from andJournal of the Electrochemical Society, 1975
- A Quantitive Calculation of the Growth Rate of Epitaxial Silicon from SiCl4 in a Barrel ReactorJournal of the Electrochemical Society, 1972
- The Effects of Gas Pressure and Velocity on Epitaxial Silicon Deposition by the Hydrogen Reduction of Chlorosilanes†International Journal of Electronics, 1967
- The Uniform Distribution of a Fluid Flowing Through a Perforated PipeJournal of Applied Mechanics, 1950