Diffusion inhibition against gold of ion beam synthesized buried silicon nitride layers in silicon
- 1 October 1988
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 34 (4) , 523-524
- https://doi.org/10.1016/0168-583x(88)90162-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Heavy metal gettering in buried nitride silicon-on-insulator structuresElectronics Letters, 1988
- Gettering of Copper in Silicon‐on‐Insulator Structures Formed by Oxygen Ion ImplantationJournal of the Electrochemical Society, 1987
- Properties of ion beam synthesized buried silicon nitride layers with rectangular nitrogen profilesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Heavy metal gettering in silicon-on-insulator structures formed by oxygen implantation into siliconJournal of Applied Physics, 1985
- The preparation, characterization and applications of silicon nitride thin filmsThin Solid Films, 1980