Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon [111] substrate
- 20 March 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 13 (3) , 99-101
- https://doi.org/10.1109/lmwc.2003.810117
Abstract
The high potential at microwave frequencies of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon [111] substrate for power applications has been demonstrated in this letter. For the first time, an output power density close to 1.8 W/mm and an associated power added efficiency of 32% have been measured on a 2 /spl times/ 50 /spl times/ 0.5 /spl mu/m/sup 2/ HEMT with a linear power gain of 16 dB. These results constitute the state of the art.Keywords
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