Delta-doped avalanche photodiodes for high bit-rate lightwave receivers
- 1 July 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 9 (7) , 900-905
- https://doi.org/10.1109/50.85792
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Planar InP-InGaAs avalanche photodetectors with n-multiplication layer exhibiting a very high gain-bandwidth productIEEE Photonics Technology Letters, 1990
- Optimum design of delta -doped InGaAs avalanche photodiode by using quasi-ionization ratesJournal of Lightwave Technology, 1990
- New approach to the frequency response analysis of an InGaAs avalanche photodiodeJournal of Lightwave Technology, 1988
- InP/InGaAsP/InGaAs avalanche photodiodes with 70 GHz gain-bandwidth productApplied Physics Letters, 1987
- Excess noise design of InP/GaInAsP/GaInAs avalanche photodiodesIEEE Journal of Quantum Electronics, 1986
- Impact ionization coefficients of electrons and holes inIEEE Journal of Quantum Electronics, 1985
- Low-dark-current low-voltage 1.3–1.6 μm avalanche photodiode with high-low electric field profile and separate absorption and multiplication regions by molecular beam epitaxyElectronics Letters, 1984
- Required Donor Concentration of Epitaxial Layers for Efficient InGaAsP Avalanche PhotodiodesJapanese Journal of Applied Physics, 1980
- Quasistatic Approximation for Semiconductor AvalanchesJournal of Applied Physics, 1970
- Multiplication noise in uniform avalanche diodesIEEE Transactions on Electron Devices, 1966