Computer Analysis of a Short-Channel BC MOSFET
- 1 August 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 15 (4) , 579-585
- https://doi.org/10.1109/JSSC.1980.1051441
Abstract
This paper describes the results of a two-dmensional numerical analysis of a normally-off-type buried-channel MOSFET (BC MOSFET). This device has two operation modes whose boundary is a flat-band voltage. Bulk current is a main current when V/sub SG/ < V/sub FB/. Short-channel effects, like the decrease of a threshold voltage, were examined. Devices with a thinner gate oxide, a shallower channel depth, and a higher substrate concentration are effective for the short-channel effect.Keywords
This publication has 16 references indexed in Scilit:
- VLSI limitations from drain-induced barrier loweringIEEE Transactions on Electron Devices, 1979
- Circuit optimization of the taper isolated dynamic gain RAM cell for VLSI memoriesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979
- Double boron implant short-channel MOSFETIEEE Transactions on Electron Devices, 1977
- Femto Joule logic circuit with enhancement-type Schottky barrier gate FETIEEE Transactions on Electron Devices, 1976
- Drain conductance of junction gate FET's in the hot electron rangeIEEE Transactions on Electron Devices, 1976
- Field-effect transistor versus analog transistor (static induction transistor)IEEE Transactions on Electron Devices, 1975
- A two-dimensional mathematical model of the insulated-gate field-effect transistorSolid-State Electronics, 1973
- Two-dimensional analysis of substrate effects in junction f.e.t.sElectronics Letters, 1970
- Iterative Solution of Implicit Approximations of Multidimensional Partial Differential EquationsSIAM Journal on Numerical Analysis, 1968
- Transport Properties of Electrons in Inverted Silicon SurfacesPhysical Review B, 1968