Effects of Strain on the Electronic and Vibrational Properties of Semiconductors and Semiconductor Microstructures
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Relaxation-induced polarized luminescence fromAs films grown on GaAs(001)Physical Review B, 1995
- Optical anisotropy in GaAs/As multiple quantum wells under thermally induced uniaxial strainPhysical Review B, 1993
- Simple Rhombohedral Structure of C70 under High PressureJapanese Journal of Applied Physics, 1993
- New Method of Preparation and Some Properties of Electrochromic MoO3 Thin LayerJapanese Journal of Applied Physics, 1993
- Photoreflectance study of strained (001) Si1−xGex/Si layersThin Solid Films, 1992
- Observation of quantum confinement by strain gradientsPhysical Review Letters, 1991
- Unambiguous identification of heavy-and light-hole states in the Photoreflectance of InxGa1−xAs/GaAs heterostructuresSolid State Communications, 1990
- Type-I to type-II superlattice transition in strained layers of As grown on InPPhysical Review Letters, 1988
- Electronic energy levels inAs/InP strained-layer superlatticesPhysical Review B, 1987
- Structurally induced optical transitions in Ge-Si superlatticesPhysical Review Letters, 1987