Surface morphology of anisotropically etched single-crystal silicon
- 9 November 2000
- journal article
- Published by IOP Publishing in Journal of Micromechanics and Microengineering
- Vol. 10 (4) , 522-527
- https://doi.org/10.1088/0960-1317/10/4/306
Abstract
We investigated the surface morphology of an anisotropically etched single-crystal silicon surface using a hemispherical specimen. The facet structures that appeared on the specimen surface were classified into three pattern types. Each pattern originated from one of three principal planes. The (100) plane-originated area had a smooth surface and expanded towards a (111) plane. The (110) plane-originated area was covered with triangular column structures. The (111) plane-originated area was covered with step structures. We made a map of the facet-structure pattern for all crystallographic orientations and showed that it corresponds to the distribution pattern of the etching rates. The facet structures that appear on an etched surface are thus strongly related to the anisotropic etching rates.Keywords
This publication has 14 references indexed in Scilit:
- Differences in anisotropic etching properties of KOH and TMAH solutionsSensors and Actuators A: Physical, 2000
- Applications and simulation of unconventional bulk-micromachining using underetching of {100} silicon planesMicrosystem Technologies, 1999
- Anisotropic etching rates of single-crystal silicon for TMAH water solution as a function of crystallographic orientationSensors and Actuators A: Physical, 1999
- Characterization of orientation-dependent etching properties of single-crystal silicon: effects of KOH concentrationSensors and Actuators A: Physical, 1998
- Anistropic multi-step etch processes of siliconJournal of Micromechanics and Microengineering, 1997
- Micromachining of (hhl) silicon structures: experiments and 3D simulation of etched shapesSensors and Actuators A: Physical, 1997
- Anisotropic etching of silicon in TMAH solutionsSensors and Actuators A: Physical, 1992
- Etching roughness for (100) silicon surfaces in aqueous KOHJournal of Applied Physics, 1991
- Hydration Model for the Molarity Dependence of the Etch Rate of Si in Aqueous Alkali HydroxidesJournal of the Electrochemical Society, 1991
- Anisotropic Etching of Crystalline Silicon in Alkaline Solutions: I . Orientation Dependence and Behavior of Passivation LayersJournal of the Electrochemical Society, 1990