Optimization of a-Si1−xCx: H films prepared by ultrahigh vacuum plasma enhanced chemical vapour deposition for electroluminescent devices
- 1 April 1994
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 241 (1-2) , 274-277
- https://doi.org/10.1016/0040-6090(94)90440-5
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- A new modular multichamber plasma enhanced chemical vapor deposition systemApplied Surface Science, 1993
- Change in bonding properties of amorphous hydrogenated silicon-carbide layers prepared with different gases as carbon sourcesApplied Physics Letters, 1992
- Influence of hydrogen dilution on the optoelectronic properties of glow discharge amorphous silicon carbon alloysJournal of Applied Physics, 1992
- Improvement of the optical and photoelectric properties of hydrogenated amorphous silicon-carbon alloys by using trisilylmethane as a feedstockApplied Physics Letters, 1991
- Electronic and optical properties of a-Si1-xCx films prepared from a H2-diluted mixture of SiH4 and CH4Philosophical Magazine Part B, 1990
- Identification of infrared absorption peaks of amorphous silicon-carbon alloy by thermal annealingApplied Physics Letters, 1987
- Preparation of highly photosensitive hydrogenated amorphous Si-C alloys from a glow-discharge plasmaJournal of Applied Physics, 1986
- Gap state spectroscopy in a-SixC1−x:H alloysJournal of Non-Crystalline Solids, 1985
- Urbach tail and gap states in hydrogenated a-SiC and a-SiGe alloysSolid State Communications, 1985
- Properties and structure of a-SiC:H for high-efficiency a-Si solar cellJournal of Applied Physics, 1982