A resistometric method to characterize electromigration at the wafer level
- 1 January 1990
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 30 (1) , 123-132
- https://doi.org/10.1016/0026-2714(90)90017-h
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Study of electromigration-induced resistance and resistance decay in Al thin-film conductorsApplied Physics Letters, 1988
- Effect of temperature on the variance of the log-normal distribution of failure times due to electromigration damageJournal of Applied Physics, 1987
- Distributions of activation energies for electromigration damage in thin-film aluminum interconnectsJournal of Applied Physics, 1987
- Noise and Grain-Boundary Diffusion in Aluminum and Aluminum AlloysPhysical Review Letters, 1985
- Compensating effects in electromigration kineticsSolid-State Electronics, 1985
- A new method for detecting electromigration failure in VLSI metallizationIEEE Journal of Solid-State Circuits, 1984
- Activation energy for electrotransport in thin aluminum films by resistance measurementsJournal of Physics and Chemistry of Solids, 1976
- A modified reliability expression for the electromigration time-to-failureMicroelectronics Reliability, 1975
- Activation Energy for Electromigration in Aluminum Films Alloyed with CopperIBM Journal of Research and Development, 1971
- RESISTANCE MONITORING AND EFFECTS OF NONADHESION DURING ELECTROMIGRATION IN ALUMINUM FILMSApplied Physics Letters, 1968