Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm

22 July 2002

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 81 (5) , 801-802
https://doi.org/10.1063/1.1497709

Abstract

We demonstrate light emission at 280 nm from UV light-emitting diodes consisting of AlInGaN/AlInGaN multiple quantum wells. Turn-on voltage of the devices is ∼5 V with a differential resistance of ∼40 Ω. The peak emission wavelength redshifts ∼1 nm at high injection currents.

Keywords

This publication has 6 references indexed in Scilit:

Sub-Milliwatt Power III-N Light Emitting Diodes at 285 nm
Japanese Journal of Applied Physics, 2002
Characteristics of high-quality p-type AlxGa1−xN/GaN superlattices
Applied Physics Letters, 2002
Study of GaN-based Laser Diodes in Near Ultraviolet Region
Japanese Journal of Applied Physics, 2002
Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells
Applied Physics Letters, 2001
Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region
Applied Physics Letters, 2001
AlGaN/GaN quantum well ultraviolet light emitting diodes
Applied Physics Letters, 1998