The current understanding of epitaxial CVD silicon layer doping in the light of modeling and theory development (VIII)
- 1 March 1989
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 24 (3) , 291-298
- https://doi.org/10.1002/crat.2170240311
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- The current understanding of epitaxial CVD silicon layer doping in the light of modeling and theory development (VII)Crystal Research and Technology, 1989
- Equilibrium dopant incorporation in CVD silicon epitaxyCrystal Research and Technology, 1989
- The current understanding of epitaxial silicon doping in the light of modelling and theory development (VI) autodoping as a special mode of dopant incorporationCrystal Research and Technology, 1988
- The current understanding of epitaxial CVD silicon layer doping in the light of modelling and theory development (V). Special features of doping with arsenic in the range of small layer growth ratesCrystal Research and Technology, 1987
- The current understanding of epitaxial CVD silicon doping in the light of modelling and theory development (III). The law of epitaxial layer doping and its limitationCrystal Research and Technology, 1987
- Decomposition equilibrium of arsine and low pressure doping of epitaxial CVD siliconCrystal Research and Technology, 1985
- On batch homogeneity in horizontal CVD reactors (I). Model of heating the process gasCrystal Research and Technology, 1983
- Kinetics of Lateral Autodoping in Silicon EpitaxyJournal of the Electrochemical Society, 1978