Decomposition equilibrium of arsine and low pressure doping of epitaxial CVD silicon
- 1 December 1985
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 20 (12) , 1583-1593
- https://doi.org/10.1002/crat.2170201206
Abstract
Calculating the composition of the decomposition equilibrium of AsH3H2 mixtures within the temperature range of epitaxial CVD‐silicon deposition shows AsH2 to be the main component for atmospheric pressure. A drop in total pressure causes As to appear as the second main component. Taking into account AsH2‐ and As particles gives rise to an incorporation of arsenic, less and less depending on total pressure with decreasing pressure. With the aid of the incorporation equation, developed in the present paper, the experimental results on the incorporation of arsenic under reduced pressure obtained by Herring, can be explained clear of contradiction.Keywords
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