Random doping-induced fluctuations of subthreshold characteristics in MOSFET devices
- 30 November 2003
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 47 (11) , 2055-2061
- https://doi.org/10.1016/s0038-1101(03)00236-3
Abstract
No abstract availableKeywords
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