Device parameter changes caused by manufacturing fluctuations of deep submicron MOSFET's
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (11) , 2210-2215
- https://doi.org/10.1109/16.333843
Abstract
Griffith Sciences, School of Information and Communication TechnologyFull TexKeywords
This publication has 7 references indexed in Scilit:
- Sensitivity of 0.1 μm MOSFETs to manufacturing fluctuationsElectronics Letters, 1993
- Experimental 0.1 mu m p-channel MOSFET with p/sup +/-polysilicon gate on 35 AA gate oxideIEEE Electron Device Letters, 1993
- High-performance 0.10- mu m CMOS devices operating at room temperatureIEEE Electron Device Letters, 1993
- Electrical Parameter Sensitivity of Deep Submicron and Micron MOSFET Devices with Variation in Processing ConditionsPublished by Springer Nature ,1993
- Design and performance of 0.1- mu m CMOS devices using low-impurity-channel transistors (LICT's)IEEE Electron Device Letters, 1992
- Compact Transistor Modelling for Circuit DesignPublished by Springer Nature ,1990
- Design and experimental technology for 0.1-µm gate-length low-temperature operation FET'sIEEE Electron Device Letters, 1987