Removal efficiency of organic contaminants on Si wafer by dry cleaning using UV/O3 and ECR plasma
- 10 December 2002
- journal article
- editorial
- Published by Elsevier in Applied Surface Science
- Vol. 206 (1-4) , 355-364
- https://doi.org/10.1016/s0169-4332(02)01215-1
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Overview and Evolution of Silicon Wafer Cleaning TechnologyPublished by Elsevier ,2008
- Effects of Rapid Thermal Annealing after Plasma H2 Pretreatment of the Copper Seed Layer Surface on Copper ElectroplatingJapanese Journal of Applied Physics, 2001
- Attenuated total reflection Fourier transform infrared spectroscopy study of the adsorption of organic contaminants on a hydrogen-terminated Si(111) surface in airApplied Physics Letters, 1999
- Adsorption Behavior of Organic Contaminants on a Silicon Wafer SurfaceJournal of the Electrochemical Society, 1999
- In-situ low-temperature (600°C) wafer surface cleaning by electron cyclotron resonance hydrogen plasma for silicon homoepitaxial growthThin Solid Films, 1996
- Identification and Removal of Trace Organic Contamination on Silicon Wafers Stared in Plastic BoxesJournal of the Electrochemical Society, 1996
- Single-wafer integrated semiconductor device processingIEEE Transactions on Electron Devices, 1992
- Hydrocarbon reaction with HF-cleaned Si(100) and effects on metal-oxide-semiconductor device qualityApplied Physics Letters, 1991
- Invited Paper Photochemical Cleaning And Epitaxy Of SiPublished by SPIE-Intl Soc Optical Eng ,1987
- Effect of organic contaminants on the oxidation kinetics of silicon at room temperatureApplied Physics Letters, 1986