A new ESD protection concept for VLSI CMOS circuits avoiding circuit stress
- 1 December 1992
- journal article
- Published by Elsevier in Journal of Electrostatics
- Vol. 29 (1) , 21-39
- https://doi.org/10.1016/0304-3886(92)90004-d
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Characterization and modeling of second breakdown in NMOST's for the extraction of ESD-related process and design parametersIEEE Transactions on Electron Devices, 1991
- Hot-electron reliability and ESD latent damageIEEE Transactions on Electron Devices, 1988
- Internal chip ESD phenomena beyond the protection circuitIEEE Transactions on Electron Devices, 1988