Direct evidence for the step density model in the initial stages of the layer-by-layer homoepitaxial growth of GaAs(111)A
- 1 January 1997
- journal article
- Published by Elsevier in Surface Science
- Vol. 370 (1) , L173-L178
- https://doi.org/10.1016/s0039-6028(96)01173-9
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Using scanning tunneling microscopy to understand diffraction oscillations: Fe growth on Cu(100)Journal of Vacuum Science & Technology A, 1995
- Growth mode evolution during homoepitaxy of GaAs (001)Applied Physics Letters, 1994
- Homoepitaxial growth of iron and a real space view of reflection-high-energy-electron diffractionPhysical Review Letters, 1993
- Surface evolution during molecular-beam epitaxy deposition of GaAsPhysical Review Letters, 1992
- Morphological model of reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on GaAs(001)Applied Physics Letters, 1992
- Origin of Reflection High-Energy Electron-Diffraction Intensity Oscillations during Molecular-Beam Epitaxy: A Computational Modeling ApproachPhysical Review Letters, 1987
- Role of Surface Molecular Reactions in Influencing the Growth Mechanism and the Nature of Nonequilibrium Surfaces: A Monte Carlo Study of Molecular-Beam EpitaxyPhysical Review Letters, 1986
- Diffraction from stepped surfaces: II. Arbitrary terrace distributionsSurface Science, 1985
- Damped oscillations in reflection high energy electron diffraction during GaAs MBEJournal of Vacuum Science & Technology B, 1983
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983