Single liquid source plasma-enhanced metalorganic chemical vapor deposition of high-quality YBa2Cu3O7−x thin films

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Abstract
High‐quality YBa2Cu3O7−x films were grown in situ on LaAlO3 (100) by a novel single liquid source plasma‐enhanced metalorganic chemical vapor deposition (CVD) process. The metalorganic complexes M (thd)n, (thd=2,2,6,6‐tetramethyl‐3‐5‐heptanedionate; M=Y, Ba, Cu) were dissolved in an organic solution and injected into a vaporizer immediately upstream of the reactor inlet. The single liquid source technique dramatically simplifies current CVD processing and can significantly improve the process reproducibility. X‐ray diffraction measurements indicated that single phase, highly c‐axis oriented YBa2Cu3O7−x was formed in situ at a substrate temperature 680 °C. The as‐deposited films exhibited a mirrorlike surface, had transition temperature Tc0≂89 K, ΔTcJc (77 K)=106 A/cm2.