High quality LPE growth of InGaAsP/InP DH laser wafers under a PH3 ambient
- 1 March 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 51 (3) , 502-508
- https://doi.org/10.1016/0022-0248(81)90430-9
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
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